The intrinsic carrier concentration ni in silicon at an absolute temperature T can be approximated by
where A1 = 3.1×1016 K-3/2·cm-3 and A2 = 7000 K.
Use the calculator below to see the effects of changing the temperature and/or the parameters on the intrinsic carrier concentration.
Calculator
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References
- Operation and Modeling of the MOS Transistor
Yannis Tsividis, Colin McAndrew
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