Crystal Structure
There is a separate page discussing diamond's crystal structure.
Mechanical and Thermal Properties
| Property | Value [ref.] |
|---|---|
| Crystal structure | Diamond (cubic) Space group: Fd3m Pearson Symbol: cF8 Strukturbericht Designation: A4 |
| Lattice parameter (300 K) | 3.56683 Å [1,2,4] 6.74033 a.u. [1,2,4] 3.5597 Å [10] 6.7269 a.u. [10] |
| Bond length (300 K) | 1.5445 Å [2] 2.9187 a.u. [2] |
| Bond angle (the tetrahedral angle) | 2×tan-1(√2) 1.9106332362... rads. 109.47122063...° |
| Packing fraction | (√3)×π/16 0.34008738... |
| Relative hardness | 10 Mohs [exact] |
| Knoop hardness | 8000 [10] |
| Knoop microhardness (100) face (110), (111) faces |
79 GPa [10] 56–102 GPa [10] 58–88 GPa [10] |
| Vickers microhardness: (100) face (111) face |
88–147 GPa [10] 98 GPa [10] |
| Abrasive hardness | 140,000 [10] |
| Modulus of elasticity | 700–1200 GPa [10] |
| Young's modulus ([111] direction) | 1223 GPa [11] |
| Volume compressibility | 18×10-10 m2 N-1 [10] |
| Compressive yield strength | 8680–16530 MPa [10] |
| Poisson's ratio | 0.1–0.29 [10] |
| Atomic weight of C | 12.0107(8) u (a.m.u.) [6] 1.9944(1)×10-26 kg [6] |
| Mass of 12C atom | 12 u (a.m.u.) [exact] 1.992648×10-26 kg |
| Density (300 K) | 3515.25 kg m-3 [1] |
| Atomic concentration (300 K) | 1.763×1023 cm-3 [2] |
| Bulk modulus | 442.3 GPa [3] |
| Linear expansion coefficient (300 K) | 1.05×10-6 K-1 [2] |
| Melting point | 3773 K [2] 4027 °C [10] 3850 K [12] |
| Coefficient of (linear) thermal expansion (20 °C) | 1.18 µm m°C-1 [10] |
| Heat capacity | 0.4715 J g-1 °C-1 [10] |
| Thermal conductivity: (Type-I, 300 K) (Type-IIa, 300 K) (Type-IIb, 300 K) — |
895 W m-1 K-1 [12] 2300 W m-1 K-1 [12] 1350 W m-1 K-1 [12] 2000 W m-1 K-1 [4,10] |
| Heat of formation | 714.4 kJ mol-1 [10] |
| Debye temperature | 2067 °C [10] |
| Raman frequency (first order) | ∼1332 cm-1 [7,8] |
Optical and Electronic Properties
| Property | Value [ref.] |
|---|---|
| Refractive index: (546.1 nm) (589 nm) (591 nm) (visible light range) |
2.424 [2] 2.419 [10] 2.41 [7] ∼2.40–2.46 [9] |
| Dielectric constant: (300 K, 1–10 kHz) (25 °C, 1 MHz) |
5.70 [2] 5.5–5.7 [10] |
| Dielectric strength | 1000 kV mm-1 [10] |
| Dissipation factor | 0.0002 [10] |
| Nature of band-gap | Indirect |
| Electronic band-gap (0 K) | 5.48 eV [4] |
| Electronic band-gap (300 K) | 5.50 eV [1] 5.47 eV [4,5] |
| Electron mobility (300 K) (high-purity single-crystal CVD) |
1800 cm2 V-1 s-1 [4] 4500 cm2 V-1 s-1 [13] |
| Hole mobility (300 K) (high-purity single-crystal CVD) |
1200 cm2 V-1 s-1 [4] 3800 cm2 V-1 s-1 [13] |
| Relative permittivity | 5.570 [1] |
References
- Physics of Semiconductors and Their Heterostructures, Jasprit Singh, McGraw-Hill, New York (1993)
- D. W. Palmer, www.semiconductors.co.uk, 2003.04
- H. J. McSkimin and P. Andreatch, Jr., J. Appl. Phys. 43 (7), 2944–2948 (1972)
- Physics of Semiconductor Devices, 2nd Edition, S. M. Sze, John Wiley & Sons, New York (1981)
- S. Koizumi, invited review presented at the conference: The Physics of Group-IV Semiconductors, University of Exeter, U.K., 7th–10th April 2003
- IUPAC, http://www.chem.qmul.ac.uk/iupac/
- Synthetic Diamond — Emerging CVD Science and Technology, Spear and Dismukes, Wiley, New York (1994)
- S. A. Solin and K. Ramdas, Phys. Rev. B 1, 1687 (1970)
- Edwards, D. F. and Philipp, H. R. in HOC-I, pg. 665
- MatWeb, http://www.matweb.com/
- Wang, S.-F. et al., Mater. Chem. Phys. 85 (2–3), 432–437 (2004)
- CRC Handbook of Chemistry and Physics, 75th Edition, David R. Lide, CRC Press, Inc., Boca Raton (1994)
- J. Isberg, J. Hammersberg, E. Johansson, T. Wikström, D. J. Twitchen, A. J. Whitehead, S. E. Coe, and G. A. Scarsbrook, Science 297, 1670–1672 (2002)
Acknowledgements
My thanks go to Jon Goss and Derek Palmer for their help in providing data for this page.