Here is a list of my publically disseminated research, including information about my journal articles, Ph.D. thesis, and conferences at which I have presented my work.
Journal Articles
- High-Voltage ESD Protection Device With Fast Transient Reaction and High Holding Voltage
Da-Wei Lai, Gijs de Raad, Stephen Sque, Wim Peters, and Theo Smedes
IEEE Transactions on Electron Devices 66 (7), 2884–2891 (July 2019) - Gate-Lifted nMOS ESD Protection Device Triggered by a p-n-p in Series With a Diode
Da-Wei Lai, Stephen Sque, Wim Peters, and Theo Smedes
IEEE Transactions on Electron Devices 66 (4), 1642–1647 (April 2019) - A 30V bidirectional power switch in a CMOS technology using standard gate oxide
Priscilla Boos, Arjan Mels, and Stephen Sque
Proceedings of the 28th International Symposium on Power Semiconductor Devices and ICs (ISPSD), 247–250 (June 2016) - Investigation of surface charges and traps in gallium nitride/aluminium gallium nitride/gallium nitride high-voltage transistors via measurements and technology computer-aided design simulations of transfer characteristics of metal–insulator–semiconductor field-effect transistors and high-electron-mobility transistors
Giorgia Longobardi, Florin Udrea, Stephen Sque, Jeroen Croon, Fred Hurkx, and Jan Šonský
IET Power Electronics 8 (12), 2322–2328 (December 2015) - Characterization of recessed Ohmic contacts to AlGaN/GaN
M. Hajłasz, J. J. T. M. Donkers, S. J. Sque, S. B. S. Heil, D. J. Gravesteijn, F. J. R. Rietveld, and J. Schmitz
Proceedings of the 2015 International Conference on Microelectronic Test Structures (ICMTS), 158–162 (March 2015) - The dynamics of surface donor traps in AlGaN/GaN MISFETs using transient measurements and TCAD modelling
Giorgia Longobardi, Florin Udrea, Stephen Sque, Jeroen Croon, Fred Hurkx, and Jan Šonský
Proceedings of the 2014 IEEE International Electron Devices Meeting (IEDM), 17.1.1–17.1.4 (December 2014) - The effect of the surface fixed charge and donor traps on the C(V) and transfer characteristics of a GaN MISFET — Experiment and TCAD simulations
G. Longobardi, F. Udrea, S. Sque, J. Croon, G. A. M. Hurkx, and J. Šonský
Proceedings of the 44th European Solid State Device Research Conference (ESSDERC), 329–332 (September 2014) - Sheet resistance under Ohmic contacts to AlGaN/GaN heterostructures
M. Hajłasz, J. J. T. M. Donkers, S. J. Sque, S. B. S. Heil, D. J. Gravesteijn, F. J. R. Rietveld, and J. Schmitz
Applied Physics Letters 104, 242109 (June 2014) - Impact of donor traps on the 2DEG and electrical behavior of AlGaN/GaN MISFETs
Giorgia Longobardi, Florin Udrea, Stephen Sque, Godefridus A. M. Hurkx, Jeroen Croon, Ettore Napoli, and Jan Šonský
IEEE Electron Device Letters 35 (1), 27–29 (January 2014) - Threshold behavior of the drift region: The missing piece in LDMOS modeling
S. J. Sque, A. J. Scholten, A. C. T. Aarts, and D. B. M. Klaassen
Proceedings of the 2013 IEEE International Electron Devices Meeting (IEDM), 12.7.1–12.7.4 (December 2013) - Modelling 2DEG charges in AlGaN/GaN heterostructures
Giorgia Longobardi, Florin Udrea, Stephen Sque, Jeroen Croon, Fred Hurkx, Ettore Napoli, and Jan Šonský
Proceedings of the 2012 International Semiconductor Conference (CAS) Vol. 2, 363–366 (October 2012) - MOS Model 20, Level 2002.2
A. C. T. Aarts, A. Tajic, and S. J. Sque
NXP Semiconductors Unclassified Technical Note PR-TN-2005/00406 (May 2009) - The transfer doping of graphite and graphene
Stephen J. Sque, Robert Jones, and Patrick R. Briddon
Physica Status Solidi (A) 204 (9), 3078–3084 (September 2007) - Modelling the effect of doping metallic carbon nanotubes on their ability to transfer-dope diamond
Stephen J. Sque, Christopher P. Ewels, Robert Jones, and Patrick R. Briddon
Physica Status Solidi (A) 204 (9), 2898–2902 (September 2007) - Carbon nanotubes and their interaction with the surface of diamond
S. J. Sque, R. Jones, S. Öberg, and P. R. Briddon
Physical Review B 75 (11), 115328 (March 2007)
Selected for inclusion in Virtual Journal of Nanoscale Science & Technology 15 (14) (April 2007) - Theoretical study on the adsorption of armchair carbon nanotubes on the hydrogenated surface of diamond
Stephen J. Sque, Robert Jones, Sven Öberg, and Patrick R. Briddon
Physica Status Solidi (A) 203 (12), 3107–3113 (September 2006) - Ab initio study of CsI and its surface
R. M. Ribeiro, J. Coutinho, V. J. B. Torres, R. Jones, S. J. Sque, S. Öberg, M. J. Shaw, and P. R. Briddon
Physical Review B 74 (3), 035430 (July 2006) - Transfer doping of diamond: Buckminsterfullerene on hydrogenated, hydroxylated, and oxygenated diamond surfaces
S. J. Sque, R. Jones, S. Öberg, and P. R. Briddon
Journal of Materials Science: Materials in Electronics 17 (6), 459–465 (June 2006) - Transfer doping of diamond: The use of C60 and C60F36 to effect p-type surface conductivity
S. J. Sque, R. Jones, S. Öberg, and P. R. Briddon
Physica B 376–377, 268–271 (April 2006) - Structure, electronics, and interaction of hydrogen and oxygen on diamond surfaces
S. J. Sque, R. Jones, and P. R. Briddon
Physical Review B 73 (8), 085313 (February 2006) - Hydrogenation and oxygenation of the (100) diamond surface and the consequences for transfer doping
S. J. Sque, R. Jones, and P. R. Briddon
Physica Status Solidi (A) 202 (11), 2091–2097 (August 2005) - Vacancy-impurity complexes and limitations for implantation doping of diamond
J. P. Goss, P. R. Briddon, M. J. Rayson, S. J. Sque, and R. Jones
Physical Review B 72 (3), 035214 (July 2005) - Quantum mechanical modeling of the structure and doping properties of defects in diamond
Jonathan P. Goss, P. R. Briddon, R. Sachdeva, R. Jones, and S. J. Sque
Proceedings of the 27th International Conference on the Physics of Semiconductors, Flagstaff, Arizona, USA, 26–30 July 2004
AIP Conference Proceedings 772 (1), 91–94 (June 2005) - Novel Doping of Diamond using C60
S. J. Sque, R. Jones, J. P. Goss, P. R. Briddon, and S. Öberg
CSAR Focus 13, 13–15 (Spring–Summer 2005) - First-principles study of C60 and C60F36 as transfer dopants for p-type diamond
S. J. Sque, R. Jones, J. P. Goss, P. R. Briddon, and S. Öberg
Journal of Physics: Condensed Matter 17 (2), L21–L26 (January 2005) - Donor and acceptor states in diamond
J. P. Goss, P. R. Briddon, R. Jones, and S. Sque
Diamond and Related Materials 13 (4–8), 684–690 (April–August 2004) - Boron-hydrogen complexes in diamond
J. P. Goss, P. R. Briddon, S. J. Sque, and R. Jones
Physical Review B 69 (16), 165215 (April 2004) - Shallow Donors in Diamond: Chalcogens, Pnictogens, and their Hydrogen Complexes
S. J. Sque, R. Jones, J. P. Goss, and P. R. Briddon
Physical Review Letters 92 (1), 017402 (January 2004) - Shallow donors in diamond: pnictogen and chalcogen hydrogen defects
S. J. Sque, R. Jones, J. P. Goss, and P. R. Briddon
Physica B: Condensed Matter 340–342, 80–83 (December 2003) - The vacancy-nitrogen-hydrogen complex in diamond: a potential deep centre in chemical vapour deposited material
J. P. Goss, P. R. Briddon, R. Jones, and S. Sque
Journal of Physics: Condensed Matter 15 (39), S2903–S2911 (October 2003)
Ph.D. Thesis
- A First-Principles Study on Bulk and Transfer Doping of Diamond
My Ph.D. thesis has its own page
Conference Presentations
- 2013 International Electron Devices Meeting (IEDM 2013)
Washington, D.C., U.S.A. (9–11 December 2013)
Threshold behavior of the drift region: the missing piece in LDMOS modeling - 43rd European Solid-State Device Research Conference (ESSDERC 2013)
Bucharest, Romania (16–20 September 2013)
Invited tutorial presentation: High-voltage GaN-HEMT devices, simulation and modelling - Hasselt Diamond Workshop (SBDD-XII)
Hasselt, Belgium (28 February – 2 March 2007)
Poster presentation: The transfer doping of graphite and graphene
Poster presentation: Modelling the effect of doping carbon nanotubes on their ability to transfer dope diamond - De Beers Diamond Conference 2006
Cambridge, U.K. (10–12 July 2006)
Oral presentation: Transfer doping of diamond with carbon nanotubes and the effect of dehydrogenation of the diamond surface - Surface and Bulk Defects in CVD Diamond Films XI (SBDD-XI)
Hasselt, Belgium (22–24 February 2006)
Oral presentation: Modelling nanotubes on diamond - 16th European Conference on Diamond, Diamond-Like Materials, Carbon Nanotubes, and Nitrides (Diamond 2005)
Toulouse, France (11–16 September 2005)
Oral presentation: The effect of oxygenated surfaces on the transfer doping properties of C60 on diamond - De Beers Diamond Conference 2005
Oxford, U.K. (13–15 July 2005)
Oral presentation: The effect of oxygenated surfaces on the transfer doping properties of C60 on diamond - Surface and Bulk Defects in CVD Diamond Films X (SBDD-X)
Hasselt, Belgium (23–25 February 2005)
Oral presentation: Hydrogenation and oxygenation of the (100) diamond surface and the consequences for transfer doping - Surface and Bulk Defects in CVD Diamond Films IX (SBDD-IX)
Hasselt, Belgium (18–20 February 2004)
Oral presentation: C60 and C60F36 on diamond surfaces as potential transfer dopants - 14th European Conference on Diamond, Diamond-Like Materials, Carbon Nanotubes, and Nitrides (Diamond 2003)
Salzburg, Austria (7–12 September 2003) - The 22nd International Conference on Defects in Semiconductors (ICDS-22)
Århus, Denmark (28 July – 1 August 2003)
Oral presentation: Electrical activity of chalcogen and pnictogen hydrogen defects in diamond
My report on the ICDS-22 is available - De Beers Diamond Conference 2003
Cambridge, U.K. (7–9 July 2003)
Oral presentation: Electrical activity of chalcogen and pnictogen hydrogen defects in diamond - The Physics of Group IV Semiconductors
Exeter, U.K. (7–10 April 2003)
Local Organiser
Poster presentation: Electrical activity of chalcogen and pnictogen hydrogen defects in diamond - Surface and Bulk Defects in CVD Diamond Films IIX (SBDD-IIX)
Hasselt, Belgium (26–28 February 2003)
Oral presentation: Electrical activity of chalcogen and pnictogen hydrogen defects in diamond